✦ LIBER ✦

Interface roughness: a reason of inaccessibility of the negative resistance region in resonant-tunneling devices

✍ Scribed by T. Figielski; T. Wosiński; A. M a̧

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 84 KB
Volume: 24
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0362

No coin nor oath required. For personal study only.

✦ Synopsis

Interface roughness in double-barrier resonant-tunneling devices affects the lateral electron motion in the quantum well and can give rise to subsidiary subbands or quasibound states in the well. We demonstrate that a shoulder frequently appearing beyond the principal resonance peak in the current-voltage characteristic can result from the resonant tunneling via those states.

📜 SIMILAR VOLUMES

Analysis of voltage periodic structures

Analysis of voltage periodic structures in the negative differential resistance region of double barrier resonant tunneling diodes

✍ O. Berolo; E. Fortin; L. Allard 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 452 KB

We present a comprehensive investigation of the Periodic Fine Structures (PFS's). These PFS's are observed in the Negative Differential Resistance (NDR) region of double-barrier resonant-tunneling diodes (DBRTD's). DBRTD's were fabricated on MBE material with different well widths and barrier materi