A study of deep metal-related centres in germanium by capacitance spectroscopy
β Scribed by S.J. Pearton
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 405 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
The n-and p-type germanium wafers have been implanted with Ti, Cr, Fe and Co and the electronic defect levels have been studied by deep level transient spectroscopy (DLTS). Distinct spectra with two to four levels have been observed which are assigned to multipleacceptor states of the substitutional
We have applied a novel technique to combine isothermal deep-level transient spectroscopy (DLTS) with the application of uniaxial compressive stress to studying the structure of a platinum-and hydrogen-related defect, which has a gap state at 0.14 eV below the conduction band in Si. The application