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A simple model for the characteristics of GaAs/AlGaAs modulation-doped devices

✍ Scribed by Long, A R; Davies, J H; Kinsler, M; Vallis, S; Holland, M C

Book ID
120510252
Publisher
Institute of Physics
Year
1993
Tongue
English
Weight
619 KB
Volume
8
Category
Article
ISSN
0268-1242

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Nanoelectronic Y-branches with lengths of the branching section down to 70 nm were fabricated by high-resolution electron beam lithography and wet etching from modulation doped GaAs=AlGaAs heterostructures. For voltages V l and Vr applied to the left and right branch reservoirs of a symmetric, balli