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A simple method to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors

✍ Scribed by Seonghearn Lee

Book ID
114617374
Publisher
IEEE
Year
2004
Tongue
English
Weight
237 KB
Volume
51
Category
Article
ISSN
0018-9383

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## Abstract A method to extract the elements of the small‐signal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured __S__‐parameters, noise figure (for a well‐matched impedance),