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A silicon self assembled quantum dot transistor operating at room temperature

✍ Scribed by B.H. Choi; S.W. Hwang; I.G. Kim; H.C. Shin; Yong Kim; E.K. Kim

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
268 KB
Volume
47
Category
Article
ISSN
0167-9317

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✦ Synopsis

A quantumdot transistor incorpomting silicon self-assembled quantum dots and planar nano-meter sized metal pads @no-arms) has been fabricated. The current-voltage characteristics measured fmm the transistor exhibits staircases and oscillations, whose interpretation is consistent with the single election tunneling through the dots located in between the source and the drain nano-arms.

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