𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A silicon-on-insulator quantum wire

✍ Scribed by J.P. Colinge; X. Baie; V. Bayot; E. Grivei

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
176 KB
Volume
39
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Band gap of a silicon quantum wire
Band gap of a silicon quantum wire
✍ Meng-Yan Shen; Shu-Lin Zhang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 430 KB
Dielectric Effect in Silicon Quantum Wir
Dielectric Effect in Silicon Quantum Wires
✍ Lisachenko, M.G. ;Konstantinova, E.A. ;Kashkarov, P.K. ;Timoshenko, V.Yu. πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 78 KB πŸ‘ 2 views
Infrared-induced emission from silicon q
Infrared-induced emission from silicon quantum wires
✍ N.T. Bagraev; E.I. Chaikina; L.E. Klyachkin; I.I. Markov; W. Gehlhoff πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 171 KB

We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correlation gap in the DOS of the degenerate hole gas. The quantum wires in this case are created by an electrostatic confining potential inside ultra-shallow p-n junc

Modelling of metal–insulator–semiconduct
Modelling of metal–insulator–semiconductor devices featuring a silicon quantum well
✍ C. Flynn; D. KΓΆnig; M.A. Green; G. Conibeer πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 680 KB

A straight-forward model of a metal-insulator-semiconductor (MIS) device that accommodates an arbitrarily defined insulating potential barrier is described. Using the model, current density-voltage (J-V) curves of MIS devices featuring a single silicon (Si) quantum well (QW) embedded between silicon