Infrared-induced emission from silicon quantum wires
β Scribed by N.T. Bagraev; E.I. Chaikina; L.E. Klyachkin; I.I. Markov; W. Gehlhoff
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 171 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correlation gap in the DOS of the degenerate hole gas. The quantum wires in this case are created by an electrostatic confining potential inside ultra-shallow p-n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion.
π SIMILAR VOLUMES
Mid-infrared optical emission due to intersubband transitions between excited conduction subbands of a coupled quantum well structure is studied. The emission process is based on optical pumping of free carriers from the ground subband into the third subband followed by a radiative transition from t