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Infrared-induced emission from silicon quantum wires

✍ Scribed by N.T. Bagraev; E.I. Chaikina; L.E. Klyachkin; I.I. Markov; W. Gehlhoff


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
171 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis


We present the first findings of a study of infrared-induced emission from silicon quantum wires, which is due to the formation of a correlation gap in the DOS of the degenerate hole gas. The quantum wires in this case are created by an electrostatic confining potential inside ultra-shallow p-n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion.


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