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A semi-empirical model for the field-effect mobility of hydrogenated polycrystalline-silicon MOSFETs

✍ Scribed by Seki, S.; Kogure, O.; Tsujiyama, B.


Book ID
114535495
Publisher
IEEE
Year
1988
Tongue
English
Weight
639 KB
Volume
35
Category
Article
ISSN
0018-9383

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