✦ LIBER ✦

A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation

✍ Scribed by Arora, N.D.; Gildenblat, G.Sh.

Book ID: 114595859
Publisher: IEEE
Year: 1987
Tongue: English
Weight: 599 KB
Volume: 34
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1987.22889

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

MOSFET electron inversion layer mobiliti

MOSFET electron inversion layer mobilities-a physically based semi-empirical model for a wide temperature range

✍ Jeon, D.S.; Burk, D.E. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 738 KB

A temperature-dependent MOSFET inversion

A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation

✍ Baohong Cheng; Woo, J. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 122 KB

A comprehensive model for inversion laye

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

✍ Agostinelli, V.M., Jr.; Shin, H.; Tasch, A.F., Jr. 📂 Article 📅 1991 🏛 IEEE 🌐 English ⚖ 886 KB

A semi-empirical model for the field-eff

A semi-empirical model for the field-effect mobility of hydrogenated polycrystalline-silicon MOSFETs

✍ Seki, S.; Kogure, O.; Tsujiyama, B. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 639 KB

Semi-empirical model of electron mobilit

Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

✍ Banqueri, J.; Lopez-Villanueva, J.; Gamiz, F.; Palma, A.; Carceller, J.E. 📂 Article 📅 1996 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 514 KB

Semi-empirical model for the threshold v

Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependence

✍ Narain D. Arora 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 985 KB