A semi-empirical model of surface scattering for Monte Carlo simulation of silicon n-MOSFETs
β Scribed by Sangiorgi, E.; Pinto, M.R.
- Book ID
- 114534483
- Publisher
- IEEE
- Year
- 1992
- Tongue
- English
- Weight
- 736 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
A new hole surface scattering model for FBMC simulations is presented for unstrained Si and biaxially strained Si/SiGe PMOSFETs. The new scattering model was developed for quantum corrected spatial hole charge distributions at the Si/SiO 2 interface, where the quantum correction is based on the impr
The kinetics for the non-dissociative adsorption of gas phase molecules on a spatially homogeneous square lattice was simulated using a Monte Carlo method which accounts for the existence of an extrinsic precursor state. We find the sticking coefficients obtained using our simulations to be lower th