## Abstract We study a collisionless transport model for electrons in a semiconductor, and we perform an asymptotic analysis for low temperatures or large applied biases. We derive analytic relations for the builtβin potential and for the current which flows through the structure.
β¦ LIBER β¦
A relaxation model for oscillations in semiconductors with double-carrier injection
β Scribed by Brabant, J. C. ;Brousseau, M. ;Barrau, J.
- Publisher
- John Wiley and Sons
- Year
- 1971
- Tongue
- English
- Weight
- 541 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0031-8965
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