๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A quantum statistical model for graphene FETs on SiC

โœ Scribed by Kuivalainen, P.; Savin, H.; Lebedeva, N.; Novikov, S.


Book ID
121233147
Publisher
John Wiley and Sons
Year
2013
Tongue
English
Weight
361 KB
Volume
250
Category
Article
ISSN
0370-1972

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Statistical model for a quantum noiseles
โœ Josรฉ Clรกudio do Nascimento; Paulo Mateus ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 424 KB

One of the most promising physical properties for implementing quantum technology is light polarization. However, since light polarization is fragile, it is crucial to use quantum error correction in order to make quantum information over optical networks feasible. This paper performs a statistical

A new procedure for nonlinear statistica
โœ Francesco Centurelli; Alberto Di Martino; Giuseppe Scotti; Pasquale Tommasino; A ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 320 KB

A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been

A compact quantum statistical model for
โœ Varpula, A. ;Lebedeva, N. ;Kuivalainen, P. ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 352 KB

## Abstract We develop an analytical quantum statistical model for nanoscale metalโ€oxideโ€semiconductor fieldโ€effect transistors (MOSFETs). The model describes transport both in the scatteringโ€limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequili