✦ LIBER ✦

A process-parameter-based circuit simulation model for ion-implanted MOSFETs and MESFETs

✍ Scribed by Karmalkar, S.; Bhat, K.N.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Impurity-profile-based threshold-voltage

✍ Ueno, H.; Kitamaru, D.; Morikawa, K.; Tanaka, M.; Miura-Mattausch, M.; Mattausch 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 339 KB

C mosfet model for analogue circuit simu

✍ Cardinali, G.; Graffi, S.; Impronta, M.; Masetti, G. 📂 Article 📅 1982 🏛 The Institution of Electrical Engineers ⚖ 762 KB

A novel surface potential-based short ch

✍ Kan Jia; Weifeng Sun; Longxing Shi 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 513 KB

A physically based compact model of part

✍ Lee, M.S.L.; Tenbroek, B.M.; Redman-White, W.; Benson, J.; Uren, M.J. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 311 KB

A new multi-layer ion implantation model

✍ D. Pantić; S. Mijalković; N. Stojadinović 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 316 KB

MOOSE: a physically based compact DC mod

✍ D'Halleweyn, N.V.T.; Benson, J.; Redman-White, W.; Mistry, K.; Swanenberg, M. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 773 KB