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A novel surface potential-based short channel MOSFET model for circuit simulation

✍ Scribed by Kan Jia; Weifeng Sun; Longxing Shi

Book ID
113798361
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
513 KB
Volume
42
Category
Article
ISSN
0026-2692

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We develop a non-quasi-static MOSFET compact model suitable for simulating RF circuits operating under GHz frequency. The model takes into account the carrier dynamics by incorporating the time delay for the carriers to form a channel. Both the timedomain and frequency-domain expressions are success