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Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation

✍ Scribed by Ueno, H.; Kitamaru, D.; Morikawa, K.; Tanaka, M.; Miura-Mattausch, M.; Mattausch, H.J.; Kumashiro, S.; Yamaguchi, T.; Yamashita, K.; Nakayama, N.

Book ID: 114616857
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 339 KB
Volume: 49
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2002.803633

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