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A pragmatic view of inverse-T-gate lightly-doped-drain transistors

✍ Scribed by E. Goranova; D. Simeonov; T. Balabanska

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 359 KB
Volume: 34
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(91)90115-f

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