✦ LIBER ✦
Technology for fabrication of inverse-T gate lightly doped drain transistors with active polysilicon spacer
✍ Scribed by D. Simeonov; E. Goranova; T. Balabanska
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 299 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0026-2692
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