## Abstract A unified, macroscopic, oneβdimensional model is presented for the quantitative description of the process of dielectric charging in RF MEMS capacitive switches. The model provides for the direct incorporation of various physical factors known to impact dielectric charging, such as surf
β¦ LIBER β¦
A Physics-Based Predictive Modeling Framework for Dielectric Charging and Creep in RF MEMS Capacitive Switches and Varactors
β Scribed by Jain, A.; Palit, S.; Alam, M.A.
- Book ID
- 114563639
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 930 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1057-7157
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Modeling of dielectric charging in RF ME
β
Prasad S. Sumant; Andreas C. Cangellaris; Narayana R. Aluru
π
Article
π
2007
π
John Wiley and Sons
π
English
β 242 KB
A compact model for dielectric charging
β
Prasad S. Sumant; Narayana R. Aluru; Andreas C. Cangellaris
π
Article
π
2009
π
John Wiley and Sons
π
English
β 342 KB
A unified, macroscopic, one-dimensional model is presented for the quantitative description of the process of dielectric charging in radio frequency micro-electromechanical systems (RF MEMS) switches. The fidelity of the model relies on the utilization of experimentally obtained data to assign value
A transient SPICE model for dielectric-c
β
Xiaobin Yuan; Zhen Peng; Hwang, J.C.M.; Forehand, D.; Goldsmith, C.L.
π
Article
π
2006
π
IEEE
π
English
β 297 KB
[IEEE IEEE MTT-S International Microwave
β
Xiaobin Yuan, ; Hwang, J.C.M.; Forehand, D.; Goldsmith, C.L.
π
Article
π
2005
π
IEEE
β 422 KB
[IEEE TRANSDUCERS 2011 - 2011 16th Inter
β
Souchon, F.; Koszewski, A.; Dieppedale, C.; Ouisse, T.
π
Article
π
2011
π
IEEE
β 969 KB