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A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

✍ Scribed by Gao, Bin; Kang, Jinfeng; Liu, Lifeng; Liu, Xiaoyan; Yu, Bin

Book ID: 121736304
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 719 KB
Volume: 98
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3599490

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