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Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

✍ Scribed by Bin Gao; Bing Sun; Haowei Zhang; Lifeng Liu; Xiaoyan Liu; Ruqi Han; Jinfeng Kang; Bin Yu

Book ID
115449441
Publisher
IEEE
Year
2009
Tongue
English
Weight
282 KB
Volume
30
Category
Article
ISSN
0741-3106

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## Abstract We report an indium‐free transparent resistive switching random access memory (TRRAM) device based on a gallium‐doped zinc oxide (GZO)‐Ga~2~O~3~‐ZnO‐Ga~2~O~3~‐GZO structure grown by metal‐organic chemical vapor deposition. The bipolar resistive‐switching behavior is investigated based o