A p-AlxGa1-xAs-p-GaAs-n-GaAs concentrator solar cell design without a collection grid
β Scribed by R. Romero
- Publisher
- John Wiley and Sons
- Year
- 1982
- Tongue
- English
- Weight
- 295 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
A concentrator solar cell is designed without a front contact collact collection grid. Its pβAl~x~Ga~1βx~AsβpβGaAsβnβGaAs epitaxial structure on a pβGaAs substrate allows for collection of the carriers generated in the p region through the substrate while carriers generated in the n region are collected through an edge ring contact.
Although cell efficiency depends on specific cell design, it has been found that such a device may work efficiently at over 100 sun incident radiation levels.
π SIMILAR VOLUMES
Energy levels of electrons in nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}