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A p-AlxGa1-xAs-p-GaAs-n-GaAs concentrator solar cell design without a collection grid

✍ Scribed by R. Romero


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
295 KB
Volume
17
Category
Article
ISSN
0232-1300

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✦ Synopsis


Abstract

A concentrator solar cell is designed without a front contact collact collection grid. Its p‐Al~x~Ga~1–x~As‐p‐GaAs‐n‐GaAs epitaxial structure on a p‐GaAs substrate allows for collection of the carriers generated in the p region through the substrate while carriers generated in the n region are collected through an edge ring contact.

Although cell efficiency depends on specific cell design, it has been found that such a device may work efficiently at over 100 sun incident radiation levels.


πŸ“œ SIMILAR VOLUMES


Energy levels of single nonabrupt GaAs/A
✍ Eraldo C. Ferreira; J.Alzamir P. da Costa; Gil A. Farias; Valder N. Freire πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 173 KB

Energy levels of electrons in nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}