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A novel measurement method for extraction of the base resistance in the BJT

โœ Scribed by Ali Toker


Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
74 KB
Volume
30
Category
Article
ISSN
0026-2692

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โœฆ Synopsis


A novel high frequency measurement method for determining the base resistance of the bipolar transistor is presented. The new method is based on the short-circuit input impedance measurements. The measurement is performed at lower frequencies compared to the circlediagram method and therefore can be applied very easily. Furthermore, it is also possible to determine some other BJT parameters from these measurements. The new method is given in detail and correction factors to parasitics are derived. It was shown that the measurement results are in good agreement with results of conventional methods.


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