The surface of a non-polar a-plane GaN light-emitting diode (LED) was intentionally damaged with a KOH wet etch to enhance the extraction of light. This roughening technique has been commonly applied to c-plane polar GaN LEDs to extract photons that would otherwise suffer from total internal refract
A new structure of nitride light-emitting diodes without polarization effects
✍ Scribed by Seweryn Morawiec; Robert P. Sarzała; Włodzimierz Nakwaski
- Book ID
- 116834126
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 541 KB
- Volume
- 407
- Category
- Article
- ISSN
- 0921-4526
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