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Wavelength shift of gallium nitride light emitting diode with p-down structure

โœ Scribed by Wen-How Lan

Book ID
114617815
Publisher
IEEE
Year
2005
Tongue
English
Weight
134 KB
Volume
52
Category
Article
ISSN
0018-9383

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Wet etching of non-polar gallium nitride
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โœ Hong-Yeol Kim; Younghun Jung; Sung Hyun Kim; Jaehui Ahn; Michael A. Mastro; Jenn ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 639 KB

The surface of a non-polar a-plane GaN light-emitting diode (LED) was intentionally damaged with a KOH wet etch to enhance the extraction of light. This roughening technique has been commonly applied to c-plane polar GaN LEDs to extract photons that would otherwise suffer from total internal refract