## Abstract The performance of III‐nitride based high‐power light emitting diodes (LEDs) is reviewed. Direct color high‐power LEDs with 1 × 1 mm^2^ chip size in commercial LUXEON^®^ Rebel packages are shown to exhibit external quantum efficiencies at a drive current of 350 mA ranging from ∼60% at a
Hybrid ZnO/III-nitride light-emitting diodes: modelling analysis of operation
✍ Scribed by Bulashevich, K. A. ;Evstratov, I. Yu. ;Karpov, S. Yu.
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 160 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Using simulations, we have analysed basic mechanisms of hybrid II–O/III–N light‐emitting diode operation. Factors largely affecting the internal quantum efficiency of hybrid single‐ and double heterostructures, including operation temperature, are examined in detail. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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