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A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

✍ Scribed by Saxena, R.S.; Kumar, M.J.

Book ID: 114619173
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 468 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.2004645

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