REF 0 . 0 Un i t r 5 0 . 0 mUnitr/ 5 0 . 0 mUnitt/ 15.802 mLI. START 0.045000000 GHz STOP 18. 045000000 GHz Figure 4 Measured and de-embedded line reflection coefficient s2 1 LINEAR s;! 1 L REF 1 . 0 U n i t s REF 0 . 0 CONCLUSION A simple and accurate method for de-embedding the scattering paramet
A new silicon-based photoconductive microwave switch
β Scribed by Joseph R. Flemish; Henry W. Kwan; Randy L. Haupt; Michael Lanagan
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 396 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
A siliconβbased photoconductive microwave switch has been designed and fabricated within a coplanar waveguide on a high resistivity Si substrate. This device offers improved signal attenuation per incident optical power when compared with other types of optically controlled attenuators that have been reported. Attenuation of more than 30 dB was achieved by illumination from a single infrared LED. Β© 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 248β252, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23961
π SIMILAR VOLUMES
over the cross section of the nanowire which is embedded in vacuum. We solve this equation numerically [13] for a nanowire 30 nm in size (side dimension) illuminated by an incident field of wavelength Ο 400 nm, with the electric-field vector perpendicular to the axis of the nanowire. In Table 1, we
## Abstract A CWβmode optically controlled microwave switch (CWβmode OMS) on a coplanar waveguide (CPW) for both a standard and a new design with carrierβconfinement structure is investigated. We experimentally show that it may not be possible to obtain less than 7 dB of insertion loss with the sta
## Abstract A new phenomenon in GaAs photoconductive semiconductor switches triggered by laser diodes is reported. It occurs when the switch is biased under the threshold and triggered by serial laser pulses. This phenomenon reflects the carrier accumulation effect when the switch operates at the n