## Abstract A silicon‐based photoconductive microwave switch has been designed and fabricated within a coplanar waveguide on a high resistivity Si substrate. This device offers improved signal attenuation per incident optical power when compared with other types of optically controlled attenuators
A high-speed silicon photoconductive switch
✍ Scribed by Tungxi Wu; Baoheng Shang; André Vander Vorst
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 338 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
REF 0 . 0 Un i t r 5 0 . 0 mUnitr/ 5 0 . 0 mUnitt/ 15.802 mLI. START 0.045000000 GHz STOP 18. 045000000 GHz Figure 4 Measured and de-embedded line reflection coefficient s2 1 LINEAR s;! 1 L REF 1 . 0 U n i t s REF 0 . 0 CONCLUSION
A simple and accurate method for de-embedding the scattering parameters of a noncoaxial microwave device using a time-domain technique has been described. The accuracy of the method has been verified experimentally. No additional calibration standards are necessary and the number of microstrip contacts is reduced, which allows better precision. Furthermore, no data concerning the length of the microstrip lines or reflects are needed and the complete test fixture is simple to realize.
📜 SIMILAR VOLUMES
over the cross section of the nanowire which is embedded in vacuum. We solve this equation numerically [13] for a nanowire 30 nm in size (side dimension) illuminated by an incident field of wavelength ϭ 400 nm, with the electric-field vector perpendicular to the axis of the nanowire. In Table 1, we
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