A new phenomenon in GaAs photoconductive semiconductor switches triggered by laser diode
✍ Scribed by Yanling Sun; Shunxiang Shi; Yanwu Zhu; Xin Wu
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 296 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A new phenomenon in GaAs photoconductive semiconductor switches triggered by laser diodes is reported. It occurs when the switch is biased under the threshold and triggered by serial laser pulses. This phenomenon reflects the carrier accumulation effect when the switch operates at the nonlinear mode. The effects of bias voltage and optical pulse energy on the carrier accumulation are investigated. The results indicate that number of carrier can be controlled by adjusting bias voltage and optical pulse energy. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2232–2234, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22678