✦ LIBER ✦

A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

✍ Scribed by Chiang, Te-Kuang

Book ID: 118254744
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 341 KB
Volume: 59
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2012.2212904

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A new two-dimensional threshold voltage

A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs

✍ T.K. Chiang 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 215 KB

Analytical model for threshold voltage a

Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

✍ Abhinav Kranti; S. Haldar; R.S. Gupta 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m

A new 2-D analytic threshold-voltage mod

A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET's

✍ Guo, J.-Y.; Wu, C.-Y. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 736 KB

Deep submicrometer double-gate fully-dep

Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach

✍ Shiao-Shien Chen; Kuo, J.B. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 632 KB

A new 2-D model for the potential distri

A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs

✍ Pandey, P.; Pal, B.B.; Jit, S. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 375 KB