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Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach

✍ Scribed by Shiao-Shien Chen; Kuo, J.B.


Book ID
114536568
Publisher
IEEE
Year
1996
Tongue
English
Weight
632 KB
Volume
43
Category
Article
ISSN
0018-9383

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