## A selective determination of the carrier density and mobility of a two-dimensional electron or hole gas in HFET or MODFET samples can be performed by measuring the magnetic-fielddependent resistivity and Hall coefficient over a field range of 1 Tesla. This is achieved even in the presence of domi
A new optical technique for characterization of technological semiconductor wafers
โ Scribed by O.V. Astafiev; V.P. Kalinushkin; V.A. Yuryev
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 670 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract We report on the optoโmicrowave characterization of InP waveguideโcoupled to microcavity disk resonators. The lateral waveguide confinement is obtained by deep inductivelyโcoupled plasma reactiveโion etching (ICPโRIE) through the guiding layer. We demonstrate the propagation of microwav
Twenty-year-old and laboratory-prepared completely hydrated cement pastes were investigated by the trimethylsilylation technique. The resulting derivatives were separated by both gas and gel permeation chromatography (GPC). Separation of the non-volatile fraction of the trimethylsilyl derivatives wa
## Abstract The method of effective penetration depth is used to produce a novel scalar or polarized finite difference approach for the solution of optical rib waveguide field problems. The new method is quicker than previous finite difference approaches and requires less computer memory. Propagati