✦ LIBER ✦
Variable-field hall technique: A new characterization tool for HFET/MODFET device wafers
✍ Scribed by Hans Brugger; Holger Koser
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 788 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0961-1290
No coin nor oath required. For personal study only.
✦ Synopsis
A selective determination of the carrier density and mobility of a two-dimensional electron or hole gas in HFET or MODFET samples can be performed by measuring the magnetic-fielddependent resistivity and Hall coefficient over a field range of 1 Tesla. This is achieved even in the presence of dominating highly doped caplsupply layers or leaky bufferslsubstrates.
The method works over a wide temperature range between 4K and 300K combined with an outstanding resolution. The measurement and the analysis of data are performed using a powerful numerical algorithm running on a standard PC under MS Windows.