A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films

✍ Scribed by P.H. Steans; J.H. Neave; G.R. Bell; J. Zhang; B.A. Joyce; T.S. Jones

• Book ID: 118549724
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 373 KB
• Volume: 459
• Category: Article
• ISSN: 0039-6028
• DOI: 10.1016/s0039-6028(00)00446-5