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The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structures

✍ Scribed by T.C. Lee; M.Y. Yen; P. Chen; A. Madhukar


Book ID
118987029
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
656 KB
Volume
174
Category
Article
ISSN
0039-6028

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