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A new I–V model for surrounding-gate MOSFET considering gate-voltage-dependent quantum effect

✍ Scribed by Kim, J.; Sun, W.; Shin, H.

Book ID
120772661
Publisher
Taylor and Francis Group
Year
2013
Tongue
English
Weight
411 KB
Volume
100
Category
Article
ISSN
0020-7217

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Analytical model for threshold voltage and I–V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET
✍ Abhinav Kranti; S. Haldar; R.S. Gupta 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 417 KB

The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical / surrounding gate MOSFET based on the solution of Poisson's equation in cylindrical coordinates. The analysis takes into account the field-dependent m