A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage

✍ Scribed by Saxena, R.S.; Kumar, M.J.

• Book ID: 111878502
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 354 KB
• Volume: 30
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2009.2026918