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A new analytical high frequency noise parameter model for AlGaN/GaN HEMT

✍ Scribed by Xiaoxu Cheng; Yan Wang


Book ID
108271804
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
349 KB
Volume
54
Category
Article
ISSN
0038-1101

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## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient