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Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates

✍ Scribed by Zhi Hong Liu; Geok Ing Ng; Arulkumaran, S.

Book ID: 114620003
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 646 KB
Volume: 57
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2047897

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