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A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs

✍ Scribed by Ruiz, F.J.G.; Tienda-Luna, I.M.; Godoy, A.; Donetti, L.; Gamiz, F.


Book ID
114620117
Publisher
IEEE
Year
2010
Tongue
English
Weight
412 KB
Volume
57
Category
Article
ISSN
0018-9383

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