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A model of interface defect states at Si/SiO2 amorphous (non-periodic) interfaces

✍ Scribed by M.R. Beltrán


Book ID
115989208
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
878 KB
Volume
163
Category
Article
ISSN
0022-3093

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Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN À ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concent