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A model for the intrinsic gate capacitances of short channel MOSFETs

✍ Scribed by R. Gharabagi; M. El Nokali

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
526 KB
Volume
32
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

A self-consistent model for short-channe
A self-consistent model for short-channel mosfets
✍ M. El Banna; M. El Nokali πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 579 KB

A dc model for short-channel MOSFETs is presented in this paper. Several second-order effects associated with small-geometry MOSFETs such as mobility degradation, carrier velocity saturation and channel length modulation are included in the model. The analysis emphasizes the modelling of the output