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A model for laser-driven dry thermochemical etching of a solid

✍ Scribed by I. Bernstein


Publisher
Elsevier Science
Year
1989
Weight
54 KB
Volume
216
Category
Article
ISSN
0167-2584

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The development of new gases for dry etching is important if submicron device geometries are to be realized. Gases which are currently in use for the various proce~\_\_sing steps associated with device fabrication include CF4, CF4/O2, SF6, CC14, and to a lesser extent NFa. It is this gas, NF3, which