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A method for determining the state of the silicon-sapphire boundary in thin silicon-on-sapphire layers

✍ Scribed by Tikhov, S. V.; Pavlov, D. A.; Krivulin, N. O.

Book ID
121604888
Publisher
Springer
Year
2013
Tongue
English
Weight
234 KB
Volume
42
Category
Article
ISSN
1063-7397

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The thermoelectric effect in silicon on
The thermoelectric effect in silicon on sapphire inversion layers
✍ R.T. Syme; M. Pepper; A. Gundlach; A. Ruthven πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 328 KB

We have investigated the thermoelectric properties of the two dimensional electron gas formed by the inversion layer in a silicon on sapphire MOSFET at low temperatures. The thermopower, S, is found to vary as T3, implying that phonon drag is dominant. S also shows an anomalous dependence on electro