The thermoelectric effect in silicon on sapphire inversion layers

✍ Scribed by R.T. Syme; M. Pepper; A. Gundlach; A. Ruthven

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 328 KB
• Volume: 5
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(89)90076-1

✦ Synopsis

We have investigated the thermoelectric properties of the two dimensional electron gas formed by the inversion layer in a silicon on sapphire MOSFET at low temperatures. The thermopower, S, is found to vary as T3, implying that phonon drag is dominant. S also shows an anomalous dependence on electron concentration above 3.5 x 1016 m -2 which we explain by occupation of a higher subband. A negative magnetothermopower was also observed and is explained using the theory of weak localisation.