The thermoelectric effect in silicon on
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R.T. Syme; M. Pepper; A. Gundlach; A. Ruthven
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Article
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1989
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Elsevier Science
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English
โ 328 KB
We have investigated the thermoelectric properties of the two dimensional electron gas formed by the inversion layer in a silicon on sapphire MOSFET at low temperatures. The thermopower, S, is found to vary as T3, implying that phonon drag is dominant. S also shows an anomalous dependence on electro