A Mechanistic Study of GaN Laser Lift-Off
β Scribed by Bret, T. ;Wagner, V. ;Martin, D. ;Hoffmann, P. ;Ilegems, M.
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 190 KB
- Volume
- 194
- Category
- Article
- ISSN
- 0031-8965
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Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and t
Thermal nanoimprint and sputtering, two low-cost techniques, are combined to define metallic patterns by means of lift-off. The typically positive sidewall angle of imprinted structures in combination with sputtering for layer deposition leads to a continuous metal layer which has to be ruptured at