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InGaN/GaN Quantum Well Microcavities Formed by Laser Lift-Off and Plasma Etching

โœ Scribed by P.R. Edwards; R.W. Martin; H.-S. Kim; K.-S. Kim; Y. Cho; I.M. Watson; T. Sands; N.W. Cheung; M.D. Dawson

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
77 KB
Volume
228
Category
Article
ISSN
0370-1972

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โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t