A well-known Scharfetter-Gummel (SG) scheme for convectiondominated problems of semiconductor and gas discharge plasmas is improved. A one-dimensional convection-diffusion equation is considered. It is shown that the original SG scheme is accurate if the potential drop between two adjacent nodes is
β¦ LIBER β¦
A mapped Scharfetter-Gummel formulation for the efficient simulation of semiconductor device models
β Scribed by Pardhanani, A.L.; Carey, G.F.
- Book ID
- 118263174
- Publisher
- IEEE
- Year
- 1997
- Tongue
- English
- Weight
- 219 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0278-0070
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