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A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures

✍ Scribed by Suzuki, E.; Hiraishi, H.; Ishii, K.; Hayashi, Y.


Book ID
114594353
Publisher
IEEE
Year
1983
Tongue
English
Weight
786 KB
Volume
30
Category
Article
ISSN
0018-9383

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